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NCE2006NE - N-Channel Enhancement Mode Power MOSFET

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Datasheet Details

Part number NCE2006NE
Manufacturer NCE Power Semiconductor
File Size 349.30 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2006NE Datasheet

General Description

The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications .It is ESD protested.

General

Overview

http://www.ncepower.com Pb Free Product NCE2006NE NCE N-Channel Enhancement Mode Power.

Key Features

  • VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package Schematic diagram.

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